Free Access
Microsc. Microanal. Microstruct.
Volume 1, Number 4, August 1990
Page(s) 241 - 246
Microsc. Microanal. Microstruct. 1, 241-246 (1990)
DOI: 10.1051/mmm:0199000104024100

The study of individual free standing GaAs/AlGaAs quantum-dots by STEM-CL

Jiannong Wang1, John Wickham Steeds1 et Hazel Arnot2

1  H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, G.B.
2  Departement of Electronic and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, G.B.

Individual free-standing quantum-dots fabricated from a GaAs/AlGaAs quantum well structure by reactive-ion etching have been investigated. Severe damage occurred at the directly etched surface. Luminescence from a single quantum dot was detected. A loss of luminescence efficiency from the dots was observed. Energy-selected luminescence images of individual quantum-dots in an array were obtained.

Des points quantiques libres, fabriqués par gravure ionique réactive à partir d'une structure de puits quantiques de GaAs/AlGaAs, sont étudiés. La surface directement attaquée, est sévèrement endommagée. On detecte la luminescence d'un point quantique. On observe une réduction de la luminescence provenant de ces points. Finalement, des images de luminescence filtrées en longueur d'onde, ont permis de visualiser des points quantiques individuels organisés en réseau.

6865H - Quantum dots.

Key words
Quantum dots -- Reactive ion etching -- Cathodoluminescence -- Damage -- Surface states -- Images -- STEM -- Gallium arsenides -- Aluminium arsenides -- Semiconductor materials -- Binary compounds -- Ternary compounds

© EDP Sciences 1990

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