Microsc. Microanal. Microstruct.
Volume 3, Number 2-3, April / June 1992
|Page(s)||213 - 219|
p → p-like transitions at the silicon L2,3-edges of silicatesPaul Lenvig Hansen1, Rik Brydson2 et David W. McComb3
1 Laboratory of Applied Physics, Technical University of Denmark, 2800 Lyngby, Denmark
2 Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, G.B.
3 Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, G.B.
We provide evidence for the existence of p → p-like transitions at the silicon L2,3-edges of common silicates. This arises due to the local, tetrahedral potential at the silicon site imposed by the nearest neighbour atoms leading to a loss of inversion symmetry. In order to successfully describe the resultant electron energy loss near-edge structure (ELNES) in such environments, we show that the consideration of such effects is extremely important.
7120P - Other inorganic compounds.
7920K - Other electron-impact emission phenomena.
8280 - Chemical analysis and related physical methods of analysis.
Electron energy loss spectra -- Energy-level transitions -- Selection rules -- Silicates -- Silicon compounds
© EDP Sciences 1992