Free Access
Issue |
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
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Page(s) | 199 - 210 | |
DOI | https://doi.org/10.1051/mmm:0199300402-3019900 |
Microsc. Microanal. Microstruct. 4, 199-210 (1993)
DOI: 10.1051/mmm:0199300402-3019900
1 LTPCM-ENSEEG, B.P. 75, 38402 St-Martin d'Hères Cedex, France
2 Département de Métallurgie, CENG, Avenue des Martyrs, BP 85X, 38402 St-Martin d'Hères Cedex, France
3 CEMES-LOE/CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France
4 LPS-INSA, Complexe Scientifique de Rangeil, 31077 Toulouse Cedex, France
6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
6220F - Deformation and plasticity (including yield, ductility, and superplasticity).
Key words
Dislocation motion -- TEM -- In situ -- Elemental semiconductors -- III-V semiconductors -- II-VI semiconductors -- Kinetics -- Activation energy -- Covalent bonds -- Cathodoplastic effect
© EDP Sciences 1993
DOI: 10.1051/mmm:0199300402-3019900
In situ TEM study of dislocation mobility in semiconducting materials
F. Louchet1, J. Pelissier2, D. Caillard3, J.P. Peyrade4, C. Levade4 et G. Vanderschaeve41 LTPCM-ENSEEG, B.P. 75, 38402 St-Martin d'Hères Cedex, France
2 Département de Métallurgie, CENG, Avenue des Martyrs, BP 85X, 38402 St-Martin d'Hères Cedex, France
3 CEMES-LOE/CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France
4 LPS-INSA, Complexe Scientifique de Rangeil, 31077 Toulouse Cedex, France
Abstract
In situ straining experiments have been conducted in Toulouse and Grenoble on elemental semiconductors, III-V and II-VI compounds. This article gives a common interpretation of the results obtained, which allows us to discuss the effect of the strength of covalent bonding on the mobility of dislocations under different conditions.
Résumé
Des expériences de déformation in situ de semiconducteurs élémentaires, et de composés III-V et II-VI, ont été réalisées à Toulouse et Grenoble. Cet article donne une interprétation commune des résultats obtenus, ce qui permet de discuter l'effet de la force des liaisons covalentes sur les mobilités des dislocations dans divers cas de figure.
6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
6220F - Deformation and plasticity (including yield, ductility, and superplasticity).
Key words
Dislocation motion -- TEM -- In situ -- Elemental semiconductors -- III-V semiconductors -- II-VI semiconductors -- Kinetics -- Activation energy -- Covalent bonds -- Cathodoplastic effect
© EDP Sciences 1993