Free Access
Microsc. Microanal. Microstruct.
Volume 7, Number 4, August 1996
Page(s) 217 - 224
Microsc. Microanal. Microstruct. 7, 217-224 (1996)
DOI: 10.1051/mmm:1996117

Heteroepitaxy of Chemically Deposited CdS on Large Lattice Mismatched (111) GaP

Daniel Lincot1, Bandombele Mokili1, Robert Cortès2 et Michel Froment2

1  Laboratoire d'Électrochimie et de Chimie Analytique, Unité associée au CNRS, École Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
2  Physique des Liquides et Électrochimie, Unité Propre du CNRS 15, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France

Heteroepitaxial CdS films (60 nm) have been deposited at $\rm
85\ ^\circ C$ on GaP from aqueous solutions of ammonia containing cadmium ions and thiourea precursors. Structural characterizations have been performed with RHEED, five circle XRD and TEM observations of cross sections. The large lattice mismatch results in the formation of a large density of stacking faults in the CdS leading to a polytype structure with an equal proportion of cubic and hexagonal modifications. Changes in the lattice parameter are observed in the CdS near the interface.

6855 - Thin film growth, structure, and epitaxy.
6820 - Solid surface structure.
6170P - Stacking faults, stacking fault tetrahedra and other planar or extended defects.
6170W - Impurity concentration, distribution, and gradients.

Key words
cadmium compounds -- II VI semiconductors -- impurity distribution -- lattice constants -- polymorphism -- reflection high energy electron diffraction -- semiconductor epitaxial layers -- stacking faults -- transmission electron microscopy -- X ray diffraction -- CdS heteroepitaxial films -- GaP 111 -- structural characterizations -- RHEED -- five circle XRD -- TEM -- stacking fault density -- polytype structure -- cubic modification -- hexagonal modification -- lattic mismatch -- near interface lattice parameter -- GaP -- CdS GaP

© EDP Sciences 1996