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Cited article:

Atomic structure of ‘W’‐type quantum well heterostructures investigated by aberration‐corrected STEM

P. KÜKELHAN, A. BEYER, C. FUCHS, M.J. WESELOH, S.W. KOCH, W. STOLZ and K. VOLZ
Journal of Microscopy 268 (3) 259 (2017)
https://doi.org/10.1111/jmi.12647

Surface relaxation of strained Ga(P,As)/GaP heterostructures investigated by HAADF STEM

ANDREAS BEYER, LENNART DUSCHEK, JÜRGEN BELZ, JAN OLIVER OELERICH, KAKHABER JANDIERI and KERSTIN VOLZ
Journal of Microscopy 268 (3) 239 (2017)
https://doi.org/10.1111/jmi.12622

Valence band alignment and work function of heteroepitaxial nanocrystals on GaAs(001)

S. Heun, Y. Watanabe, B. Ressel, Th. Schmidt and K. C. Prince
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 19 (6) 2057 (2001)
https://doi.org/10.1116/1.1410942

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Elvio Carlino, Cinzia Giannini, Leander Tapfer, Kurt A. Mäder and Hans von Känel
Microscopy Microanalysis Microstructures 6 (5-6) 473 (1995)
https://doi.org/10.1051/mmm:1995138