Articles citing this article

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Cited article:

Current density profile characterization and analysis method for focused ion beam

Yuval Greenzweig, Yariv Drezner, Shida Tan, Richard H. Livengood and Amir Raveh
Microelectronic Engineering 155 19 (2016)
https://doi.org/10.1016/j.mee.2016.01.016

High-dose phenomena in zinc-implanted silicon crystals

S. Simov, M. Kalitzova, D. Karpuzov, R. Yankov, Ch. Angelov, J. Faure, P. Bonhomme and G. Balossier
Journal of Applied Physics 79 (7) 3470 (1996)
https://doi.org/10.1063/1.361395

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

J. Fauré, A. Claverie, L. Laanab and P. Bonhomme
Materials Science and Engineering: B 22 (2-3) 128 (1994)
https://doi.org/10.1016/0921-5107(94)90234-8

Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells

C. Vieu, M. Schneider, H. Launois and B. Descouts
Journal of Applied Physics 71 (10) 4833 (1992)
https://doi.org/10.1063/1.350626