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Cited article:

Spatially resolved EELS of GaAs/GaAlAs heterostructures

Hubert Lakner, Ludwig Josef Balk, Erich Kubalek

Microsc. Microanal. Microstruct., 2 2-3 (1991) 293-300

DOI: https://doi.org/10.1051/mmm:0199100202-3029300

This article has been cited by the following article(s):

Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques

H. Lakner, C. Mendorf, B. Bollig, W. Prost and F.-J. Tegude
Materials Science and Engineering: B 44 (1-3) 52 (1997)
DOI: 10.1016/S0921-5107(96)01800-4
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High spatial resolution extended energy loss fine structure investigations of silicon dioxide compounds

Zou Wei Yuan, Stefan Csillag, Mohammad A. Tafreshi and Christian Colliex
Ultramicroscopy 59 (1-4) 149 (1995)
DOI: 10.1016/0304-3991(95)00037-2
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Characterization of III - V semiconductor interfaces byZ-contrast imaging, EELS and CBED

Hubert Lakner, Bernd Bollig, Stefan Ungerechts and Erich Kubalek
Journal of Physics D: Applied Physics 29 (7) 1767 (1996)
DOI: 10.1088/0022-3727/29/7/012
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Characterization of AlGaAs/GaAs interfaces by EELS and high-resolutionZ-contrast imaging in scanning transmission electron microscopy (STEM)

H. Lakner, M. Maywald, L. J. Balk and E. Kubalek
Surface and Interface Analysis 19 (1-12) 374 (1992)
DOI: 10.1002/sia.740190170
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H. Lakner
15 (1996)
DOI: 10.1109/ICIPRM.1996.491922
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