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Cited article:

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

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Journal of Applied Physics 134 (7) (2023)
https://doi.org/10.1063/5.0153103

Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach

Sami A. El Hageali, Harvey Guthrey, Steven Johnston, Jake Soto, Bruce Odekirk, Brian P. Gorman and Mowafak Al-Jassim
Journal of Applied Physics 131 (18) (2022)
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Review Article: Case studies in future trends of computational and experimental nanomechanics

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Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

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Journal of Applied Physics 119 (14) (2016)
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Toward Demystifying the Mohs Hardness Scale

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Journal of the American Ceramic Society 98 (9) 2681 (2015)
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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices 263 (2013)
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Mitigating Defects within Silicon Carbide Epitaxy

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Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes under Forward Biasing

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MRS Proceedings 815 (2004)
https://doi.org/10.1557/PROC-815-J6.1

Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p–i–n diodes

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Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes

A. Galeckas, J. Linnros, B. Breitholtz and H. Bleichner
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Dislocation motion in semiconducting crystals under the influence of electronic perturbations

K Maeda, K Suzuki, Y Yamashita and Y Mera
Journal of Physics: Condensed Matter 12 (49) 10079 (2000)
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Electronically induced dislocation glide motion in hexagonal GaN single crystals

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Physica B: Condensed Matter 273-274 134 (1999)
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Bright-line defect formation in silicon carbide injection diodes

A. O. Konstantinov and H. Bleichner
Applied Physics Letters 71 (25) 3700 (1997)
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High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors

K. Maeda, M. Inoue, K. Suzuki, et al.
Journal de Physique III 7 (7) 1451 (1997)
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A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC

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Journal of Materials Research 11 (4) 884 (1996)
https://doi.org/10.1557/JMR.1996.0110