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Elastic Strain Relaxation in Si1-xGex Layers Epitaxially Grown on Si Substrates

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Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

F. Houdellier, C. Roucau, L. Clément, J.L. Rouvière and M.J. Casanove
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DOI: 10.1016/j.ultramic.2006.04.011
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Nanostructured Semiconductors

Isabelle Berbezier, Antoine Ronda, Jean-Noël Aqua, Luc Favre and Thomas Frisch
Nanostructured Semiconductors 165 (2014)
DOI: 10.1201/b15634-6
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Microscopy of Semiconducting Materials 2001

S Lavagne, C Levade and G Vanderschaeve
Microscopy of Semiconducting Materials 2001 219 (2018)
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SiGe nanostructures: new insights into growth processes

I Berbezier, A Ronda and A Portavoce
Journal of Physics: Condensed Matter 14 (35) 8283 (2002)
DOI: 10.1088/0953-8984/14/35/306
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Distortion Measurement of Multi-Finger Transistor Using Split Higher-Order Laue Zone Lines Analysis

Fumihiko Uesugi, Takashi Yamazaki, Koji Kuramochi, et al.
Japanese Journal of Applied Physics 47 (5) 3709 (2008)
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