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In situ TEM study of dislocation mobility in semiconducting materials

F. Louchet, J. Pelissier, D. Caillard, J.P. Peyrade, C. Levade and G. Vanderschaeve

Microsc. Microanal. Microstruct., 4 2-3 (1993) 199-210

DOI: https://doi.org/10.1051/mmm:0199300402-3019900

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