Free Access
Issue |
Microsc. Microanal. Microstruct.
Volume 2, Number 2-3, April / June 1991
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Page(s) | 395 - 402 | |
DOI | https://doi.org/10.1051/mmm:0199100202-3039500 |
Microsc. Microanal. Microstruct. 2, 395-402 (1991)
DOI: 10.1051/mmm:0199100202-3039500
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
7120M - Elemental semiconductors.
7870D - X-ray absorption spectra.
0781 - Electron and ion spectrometers.
Key words
Band structure -- EEL spectroscopy -- Core level -- Density of states -- Carbon -- Silicon -- Aluminium -- Silicon oxides -- Aluminium oxides
© EDP Sciences 1991
DOI: 10.1051/mmm:0199100202-3039500
Current trends for EELS studies in physics
Philip Edward BatsonIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
Abstract
The present level of accuracy and energy resolution attained by parallel recording instruments allows many new details to be extracted from energy loss data obtained from small areas. The new information has inspired theoretical studies to gain further understanding. Contact with the soft x-ray photo-absorption field appears likely to allow better understanding through use of complimentary techniques. Further improvement of the accuracy of the EELS recording equipment is continuing, as well as development of instruments for recording multiple types of experimental data.
7120M - Elemental semiconductors.
7870D - X-ray absorption spectra.
0781 - Electron and ion spectrometers.
Key words
Band structure -- EEL spectroscopy -- Core level -- Density of states -- Carbon -- Silicon -- Aluminium -- Silicon oxides -- Aluminium oxides
© EDP Sciences 1991