Free Access
Microsc. Microanal. Microstruct.
Volume 2, Number 2-3, April / June 1991
Page(s) 143 - 151
Microsc. Microanal. Microstruct. 2, 143-151 (1991)
DOI: 10.1051/mmm:0199100202-3014300

The interpretation of near edge structure

Peter Rez1, 2, Xudong Weng1, 3 et Hong Ma1

1  Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, U.S.A.
2  Department of Physics, Madingley Road, Cambridge CH3 OHE, England
3  Cavendish Laboratory, Madingley Road, Cambridge CH3 OHE, England

The near edge structure up to 30 eV above the ionisation threshold of inner shell edges can be interpreted either as the result of interference of waves scattered from neighbouring atoms or in terms of the local projected conduction band density of states. Methods of calculating near edge structure based on both these viewpoints will be discussed and applications to the near edge structures observed in semiconductors and insulators reviewed. Particular emphasis will be given to those cases where the calculations lead to a simple interpretation of near edge structure.

7890 - Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter.
7120N - Semiconductor compounds.

Key words
Band structure -- Band theory calculations -- Cluster approximation -- Wave interference -- Density of states -- Conduction bands -- Semiconductor materials -- Insulating materials -- Beta phase -- Silicon carbides -- Boron nitrides -- Ionization threshold -- Near edge structure

© EDP Sciences 1991