Microsc. Microanal. Microstruct. 3, 23-34 (1992)
DOI: 10.1051/mmm:019920030102300

Etude du système Cr/Si(111) : croissance épitaxique de films de CrSi2

André Oustry¹, Michel Caumont¹, Marie-Josée David¹, Jacques Berty¹ et André Rocher<sup>2

1</sup>  Laboratoire de Physique des Solides Associé au CNRS (URA.74), Université Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex, France
²  CEMES-LOE/CNRS (UPR.8011), BP.4347, 29 Rue Jeanne Marvig, 31055 Toulouse Cedex, France

Abstract
The interface formation of Cr evaporated onto Si(111)7 x 7 surfaces, with samples maintained at room temperature, and the epitaxial growth of chromium silicides after subsequent annealing have been studied by RHEED, EXFAS and TEM. The EXFAS features above the Cr - M2,3 VV Auger line have been analyzed for very thin Cr deposits. The radial distribution function indicates the formation of a CrSi2 interface at room temperature. Reflection high energy electron diffraction and transmission electron microscopywere used to investigate the epitaxial growth of CrSi2 on Si(111) surfaces.

Résumé
Nous avons étudié, par diffraction d'électrons rapides, EXFAS et microscopie électronique, les premiers stades de la formation de l'interface Cr/Si(111) à la température ambiante ainsi que la croissance épitaxique du siliciure CrSi2 par recuit thermique des dépôts de chrome.

PACS
6114H - Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED).
6118 - Other methods of structure determination.
8115 - Methods of deposition of films and coatings; film growth and epitaxy.
6837L - Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.).

Key words
Crystal growth -- Epitaxial layers -- Electron diffraction -- TEM -- EXAFS -- RHEED -- Thermal annealing -- Temperature effects -- Interface structure


© EDP Sciences 1992