Microsc. Microanal. Microstruct.
Volume 6, Number 1, February 1995
|Page(s)||141 - 147|
In Situ EELS and TEM Observation of Al Implanted with Nitrogen IonsKiichi Hojou1, Shigemi Furuno1, Tesuo Tsukamoto2, Kouhei N. Kushita1, Hitoshi Otsu1 et Kazuhiko Izui3
1 Japan Atomic Energy Research Institute, Tokai-mura, Ibarabi-ken, 319-11, Japan
2 Origin Electric Co. Ltd., 1-18-1, Takada, Toshima-ku, Tokyo 171, Japan
3 Nagasaki Univ., Bunkyo-machi, Nagasaki-si, Nagasaki, 852, Japan
Formation processes of Aluminum nitride (AlN) in Aluminum (Al) implanted with nitrogen were examined by in situ EELS and TEM observations during nitrogen ion implantation in an electron microscope at room temperature and C. AlN phase was identified both by EDP and EELS after nitrogen ion implantation to . The observed peak (20.8 eV) in EELS spectra was identified as the plasmon loss peak of AlN formed in Al. The binding energy of in Al was found to shift by about 4 eV to the lower side with increasing nitrogen-ion fluence. Unreacted Al was also found to remain in the AlN films after high fluence implantation both at room temperature and C.
7920K - Other electron surface impact phenomena.
6630N - Chemical interdiffusion in solids.
6180J - Ion beam effects.
6170T - Doping and implantation of impurities.
6180M - Channelling, blocking and energy loss of particles.
3520V - Molecular ionization potentials, electron affinities, molecular core binding energy.
6150L - Crystal binding.
6170W - Impurity concentration, distribution, and gradients.
7145G - Exchange, correlation, dielectric and magnetic functions, plasmons.
aluminium -- binding energy -- chemical interdiffusion -- electron diffraction -- electron energy loss spectra -- impurity distribution -- ion implantation -- nitrogen -- plasmons -- transmission electron microscopy -- EELS -- TEM -- formation processes -- ion implantation -- room temperature -- electron diffraction patterns -- plasmon loss peak -- binding energy -- high fluence implantation -- electron energy loss spectra -- transmission electron microscopy -- 400 C -- 20.8 eV -- 23 C -- AlN -- Al:N
© EDP Sciences 1995