Free Access
Issue
Microsc. Microanal. Microstruct.
Volume 5, Number 3, June 1994
Page(s) 213 - 236
DOI https://doi.org/10.1051/mmm:0199400503021300
References of Microsc. Microanal. Microstruct. 5 213-236
  • Mo Y.M., Savage D.E., Schwarzentruber B.S. and Legally M.G., Kinetic pathway in Stranski-krastanov growth of Ge on Si (001 Phys. Rev. lett. 65 (1990) 1020. [CrossRef] [PubMed]
  • Eaglesham D.J. and Cerullo M., Dislocation-free Stranski-Krastanov growth of Ge on Si (100 Phys Rev. Lett. 64 (1993) 1943. [CrossRef]
  • Goldstein L., Glas F., Marzin J.Y., Charasse M.N. and Le Roux G., Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices Appl. Phys. Lett. 47 (1985) 1099. [CrossRef]
  • Houzay F., Guille C., Moison J.M., Henoc P. and Barthe F., First stages of the MBE growth of InAs on (001) GaAs J. Crystal Growth 81 (1987) 67. [CrossRef]
  • Grunthaner F.J., Yen M.Y., Fernandez R., Lee T.C., Madhukar A. and Lewis B.F., Appl. Phys. Lett. 46 (1985) 983. [CrossRef]
  • Berger P.R., Chang K., Battacharya P.K. and Singh J., A study of strain-related effects in the molecular beam epitaxy growth of InGaAs on GaAs using reflection high-energy electron diffraction J. Vac. Sci. Technol. B5 (1987) 1162.
  • Copel M., Reuter M.C., Kaxiras E. and Tromp R.M., Phys. Rev. Lett. 70 (1993) 966. [CrossRef] [PubMed]
  • Grandjean N., Massies J. and Etgens V.T., Phys. rev. Lett. 69 (1992) 796. [CrossRef] [PubMed]
  • Choi C.H., Bamett S.A., Phys. Rev. Lett. 67 (1991) 2826. [CrossRef] [PubMed]
  • Gerard J.M., Marzin J.Y., Jusserand B., Glas F. and Primot J., Appl. Phys. Lett. 54 (1989) 30. [CrossRef]
  • Briones F., Gonzalez L. and Ruiz A., Appl. Phys. 49 (1989) 729. [CrossRef]
  • Tamargo M.C., Hull R., Greene L.H., Hayes J.R. and Cho A. , Appl. Phys. Lett. 46 (1985) 569. [CrossRef]
  • Ohno H., Katsumi R., Takama T. and Hasegawa H., Jpn. J. Appl. Phys. 24 (1985) L682. [CrossRef]
  • Massies J., Turto F., Salettes A. and Contour J.P., J. Cryst. Growth 80 (1987) 307. [CrossRef]
  • Moison J.M., Guille C., Houzay F., Barthe F. and Van Rompay M., Surface segregation of third-column atoms in group III-V arsenide compounds: ternary alloys and heterostructures Phys. Rev. B40 (1989) 6149, and references therein.
  • Le Goues F.K., Copel M. and Tromp R.M., Phys. Rev. B42 (1990) 11690.
  • Gerard J.M., Highly strained InAs/GaAs short period superlattices, in "Condensed Systems of Low Dimensionality", J.L. Beeby Ed., NATO ASI Series B253, Plenum, New York (1991).
  • Gerard J.M. and Marzin J.Y., Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures Phys. Rev. B45 (1992) 6313.
  • Gerard J.M., High resolution in situ measurement of the surface composition of InGaAs and InAlAs at growth temperature, J. Crystal Growth 127 (1993) 981. [CrossRef]
  • Gerard J.M. and Le Roux G., Appl. Phys. Lett. 62 (1993) 3452. [CrossRef]
  • Quillec M., Goldstein L., Le Roux G., Burgeat J. and Primot J., J. Appl. Phys 55 (1984) 2907.
  • d'Anterroches C., Marzin J.Y., Le Roux G. and Goldstein L., J. Crystal Growth 81 (1987) 121. [CrossRef]
  • Stadelmann P., Ultramicroscopy 21 (1987) 131. [CrossRef]
  • Bierwolf R., Hohenstein M., Philipp F., Brandt O., Crook G.E. and Ploog K., Ultramicroscopy 49 (1993) 273. [CrossRef]
  • Jouneau P.H., Tardot A., Feuillet G., Mariette H. and Cibert J. , J. Appl. Phys. 75 (1994) 7310. [CrossRef]
  • Desseaux J., Renault A. and Bourret A., Phil. Mag. 35 (1977) 357. [CrossRef]
  • Thoma S. and Cerva H., Ultramicroscopy 35 (1991) 77. [CrossRef]
  • Ourmazd A., J. Cryst. Growth 98 (1989) 72. [CrossRef]
  • Frank J., Optik 38 (1973) 519.
  • Treacy M., Gibson J.M. , J. Vac. Sci. Techno B4 (1986) 1458. [CrossRef]
  • d'Anterroches C., Gerard J.M., Marzin J.Y., NATO ASI series Ed. D. Cherns 203 (1990) 47.
  • Yen M.Y., Madhukar A., Llewis B.F., Fernandez R., Eng L. and Grunthaner F.J., Surf. sci. 174 (1986) 606. [CrossRef]
  • Gerard J.M., d'Anterroches C. and Marzin J.Y., J. Crystal Growth. 127 (1993) 536. [CrossRef]
  • Giannini C., Tapfer L., Lagomarsino L., Boulliard J.C., Taccoen A., Capelle B., Ilg M., Brandt O. and Ploog K., Submitted to Phys. Rev. B