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Cited article:

Interactions between Dislocations and Boundaries during Deformation

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Materials 14 (4) 1012 (2021)
https://doi.org/10.3390/ma14041012

Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation

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Semiconductor Science and Technology 35 (4) 043001 (2020)
https://doi.org/10.1088/1361-6641/ab675e

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

A. Lantreibecq, J.-Ph. Monchoux, E. Pihan, B. Marie and M. Legros
Materials Today: Proceedings 5 (6) 14732 (2018)
https://doi.org/10.1016/j.matpr.2018.03.063

Dislocation motion controlled by interactions with crystal lattice: modelling and experiments

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International Materials Reviews 50 (6) 366 (2005)
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High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors

K. Maeda, M. Inoue, K. Suzuki, et al.
Journal de Physique III 7 (7) 1451 (1997)
https://doi.org/10.1051/jp3:1997199

An on-wafer test structure to measure the effect of thermally-induced stress on silicon devices

Y. Haddab, D. Manic and R.S. Popovic
Microelectronics Reliability 37 (10-11) 1441 (1997)
https://doi.org/10.1016/S0026-2714(97)00082-6