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Dynamical electron diffraction analysis of lattice parameters, Debye—Waller factors and order in Ti-Al and Ti-Ga alloys

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Ultramicroscopy 66 (3-4) 193 (1996)
DOI: 10.1016/S0304-3991(96)00088-5
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Voltage and temperature dependence of silicon high-order Laue zone line positions

C. J. Rossouw and P. R. Miller
Philosophical Magazine B 67 (5) 733 (1993)
DOI: 10.1080/13642819308219320
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Convergent-beam electron diffraction studies of epitaxial Si/SiO2systems

F. Banhart and N. Nagel
Philosophical Magazine A 70 (2) 341 (1994)
DOI: 10.1080/01418619408243189
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Interpretable resolution of 0.2 nm at 100 kV using electron holography

Alex Harscher, Günter Lang and Hannes Lichte
Ultramicroscopy 58 (1) 79 (1995)
DOI: 10.1016/0304-3991(94)00180-U
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