Microsc. Microanal. Microstruct.
Volume 3, Number 2-3, April / June 1992
|Page(s)||221 - 232|
The HOLZ lines in Si zone axis patternsGottfried Möllenstedt et Fang Zhou
Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 12, 7400 Tübingen 1, Germany
High order Laue zone (HOLZ) lines in the high symmetry zone axis of Si have been carefully examined theoretically and experimentally. The dependences of the displacement of HOLZ lines in Si zone axis patterns on the incident electron energy and on the lattice parameter were studied using computer simulations based on the Bloch wave many beam theory. Thus, the angular displacement of HOLZ lines was found to vary with voltage at a rate of 0.24 mrad/kV at about 100 kV The HOLZ lines (5, 5, 11), (5, 11, 5) and (11, 5, 5) were found to coincide at an incident electron energy of 103.15 ke V. Experimental convergent beam electron diffraction (CBED) patterns obtained using an electron microscope equipped with either a field emission gun (FEG) or an energy filter are compared with computer simulations. Good agreement between experimental and simulated patterns is found if the electron energy is adequately corrected for materials with known lattice parameters. The high precision of lattice parameter determinations using the coincidences of X-rays from lattice sources according to Walther Kossel and the accurate material analysis using Castaing's microprobe are mentioned in this context.
6114D - Theories of diffraction and scattering.
6114 - Electron diffraction and scattering.
Convergent beam method -- Electron diffraction -- Lattice parameters -- Computerized simulation -- Bloch wave -- Silicon -- Crystal faces -- Monocrystals -- HOLZ lines -- Si
© EDP Sciences 1992