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Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

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Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

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Zn 0.85 Cd 0.15 Se active layers on graded-composition InxGa1−xAs buffer layers

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Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction

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12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures

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Selective ion-channeling study of misfit dislocation grids in semiconductor heterostructures: Theory and experiments

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Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures

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Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures

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Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors

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MRS Proceedings 406 (1995)
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Transmission Electron Diffraction Techniques for Nm Scale Strain Measurement in Semiconductors

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Electron and ion beam analysis of composition and strain in Si-x Ge x /Si heterostructures

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Structural characterization techniques for the analysis of semiconductor strained heterostructures

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Quantitative analysis of films by ion microbeam methods. I: RBS, NRA, and channeling

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