Free Access
Microsc. Microanal. Microstruct.
Volume 3, Number 4, August 1992
Page(s) 363 - 384
Microsc. Microanal. Microstruct. 3, 363-384 (1992)
DOI: 10.1051/mmm:0199200304036300

Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry

Aldo Armigliato1, Marco Servidori1, Franco Cembali1, Rita Fabbri1, Rodolfo Rosa1, Franco Corticelli1, Donato Govoni1, Antonio V. Drigo2, Massimo Mazzer2, Filippo Romanato2, Stefano Frabboni3, Roberto Balboni3, Subramanian S. Iyer4 et Antonella Guerrieri5

1  CNR-Istituto LAMEL, via Castagnoli 1, 40126 Bologna, Italy
2  Dipartimento di Fisica and Unità GNSM-INFM, Università di Padova, via Marzolo 8, 35131 Padova, Italy
3  Dipartimento di Fisica, Univ. di Modena, via G. Campi 213/A, 41100 Modena, Italy
4  IBM Research Division TJ. Watson Res. Center, Yorktown Heights, PO Box 218, NY 10598, U.S.A.
5  Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali (CNRSM) Via Marconi 147, 72023 Mesagne, Italy

Thin film Si1-xGex alloys have been grown on silicon by molecular beam epitaxy with nominal composition, x, between 10 and 20 at %. These heterostructures have several applications in band-engineering and in the field of device structures. Film thicknesses, germanium atomic fractions and tetragonal distortion were determined by three different techniques, i.e. Rutherford Baclcscattering Spectrometry-Channeling, Analytical Electron Microscopy and Double Crystal X-ray Diffractometry. The good agreement found between the various analytical results demonstrates that each technique is capable of a high level of accuracy and consistency. These characterization methods are therefore powerful tools for the precise control of the epitaxial layer growth parameters for the fabbrication of different device structures.

6855J - Structure and morphology; thickness; crystalline orientation and texture.
6855N - Composition and phase identification.
7340 - Electronic transport in interface structures.
8280Y - Rutherford backscattering (RBS), and other methods of chemical analysis.

Key words
Chemical composition -- Layer thickness -- Lattice distortion -- RBS -- TEM -- XRD -- Thin films -- Binary alloys -- Silicon alloys -- Germanium alloys -- Concentration measurement -- MBE method -- Strain measurement -- Convergent beam method -- Electron diffraction -- Si substrate -- Si(x)Ge(1-x) -- Ge Si

© EDP Sciences 1992