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Thickness determination of very thin SiO2 films on Si by electron-induced x-ray emission spectroscopy

C. Hombourger, P. Jonnard, E. O. Filatova and V. Lukyanov
Applied Physics Letters 81 (15) 2740 (2002)
DOI: 10.1063/1.1511281
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Depth profiling of P shallow implants in silicon by electron-induced X-ray emission spectroscopy

Ch. Hombourger, Ph. Jonnard, Ch. Bonnelle and P.-F. Staub
The European Physical Journal Applied Physics 24 (2) 115 (2003)
DOI: 10.1051/epjap:2003078
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