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Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2

C Bonafos, B Garrido, M Lopez, et al.
Materials Science and Engineering: B 69-70 380 (2000)
DOI: 10.1016/S0921-5107(99)00411-0
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An electron microscopy study of the growth of Ge nanoparticles in SiO2

C. Bonafos, B. Garrido, M. Lopez, et al.
Applied Physics Letters 76 (26) 3962 (2000)
DOI: 10.1063/1.126835
See this article