Free Access
| Issue |
Microsc. Microanal. Microstruct.
Volume 7, Number 4, August 1996
|
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|---|---|---|
| Page(s) | 217 - 224 | |
| DOI | https://doi.org/10.1051/mmm:1996117 | |
Microsc. Microanal. Microstruct. 7, 217-224 (1996)
DOI: 10.1051/mmm:1996117
1 Laboratoire d'Électrochimie et de Chimie Analytique, Unité associée au CNRS, École Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
2 Physique des Liquides et Électrochimie, Unité Propre du CNRS 15, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
6855 - Thin film growth, structure, and epitaxy.
6820 - Solid surface structure.
6170P - Stacking faults, stacking fault tetrahedra and other planar or extended defects.
6170W - Impurity concentration, distribution, and gradients.
Key words
cadmium compounds -- II VI semiconductors -- impurity distribution -- lattice constants -- polymorphism -- reflection high energy electron diffraction -- semiconductor epitaxial layers -- stacking faults -- transmission electron microscopy -- X ray diffraction -- CdS heteroepitaxial films -- GaP 111 -- structural characterizations -- RHEED -- five circle XRD -- TEM -- stacking fault density -- polytype structure -- cubic modification -- hexagonal modification -- lattic mismatch -- near interface lattice parameter -- GaP -- CdS GaP
© EDP Sciences 1996
DOI: 10.1051/mmm:1996117
Heteroepitaxy of Chemically Deposited CdS on Large Lattice Mismatched (111) GaP
Daniel Lincot1, Bandombele Mokili1, Robert Cortès2 et Michel Froment21 Laboratoire d'Électrochimie et de Chimie Analytique, Unité associée au CNRS, École Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
2 Physique des Liquides et Électrochimie, Unité Propre du CNRS 15, Université Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
Abstract
Heteroepitaxial CdS films (60 nm) have been deposited at
on
GaP from aqueous solutions of ammonia containing cadmium ions
and thiourea precursors. Structural characterizations have been
performed with RHEED, five circle XRD and TEM observations of
cross sections. The large lattice mismatch results in the
formation of a large density of stacking faults in the CdS
leading to a polytype structure with an equal proportion of
cubic and hexagonal modifications. Changes in the lattice
parameter are observed in the CdS near the interface.
6855 - Thin film growth, structure, and epitaxy.
6820 - Solid surface structure.
6170P - Stacking faults, stacking fault tetrahedra and other planar or extended defects.
6170W - Impurity concentration, distribution, and gradients.
Key words
cadmium compounds -- II VI semiconductors -- impurity distribution -- lattice constants -- polymorphism -- reflection high energy electron diffraction -- semiconductor epitaxial layers -- stacking faults -- transmission electron microscopy -- X ray diffraction -- CdS heteroepitaxial films -- GaP 111 -- structural characterizations -- RHEED -- five circle XRD -- TEM -- stacking fault density -- polytype structure -- cubic modification -- hexagonal modification -- lattic mismatch -- near interface lattice parameter -- GaP -- CdS GaP
© EDP Sciences 1996