Free Access
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
Page(s) 449 - 456
Microsc. Microanal. Microstruct. 6, 449-456 (1995)
DOI: 10.1051/mmm:1995135

Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED

Aldo Armigliato1, Roberto Balboni1, Franco Corticelli1 et Stefano Frabboni2

1  CNR-Istituto LAMEL, Via P. Gobetti, 101 40129 Bologna, Italy
2  Dipartimento di Fisica, Universita' di Modena, Via Campi 213/A 41100 Modena, Italy

The LACBED technique has been applied to the determination of the tetragonal distortion in $\rm Si_{1-x}Ge_xSi$ heterostructures, which are of great interest in the device technology. The strain determination has been performed on plan sections in an analytical electron microscope. The agreement between this strain value and the tetragonal distortion is influenced mainly by the local sample flatness and the acceleration voltage.

6114F - Experimental electron diffraction and scattering.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
6825 - Mechanical and acoustical properties of solid surfaces and interfaces.
6220F - Deformation and plasticity.
8140L - Deformation, plasticity and creep.

Key words
deformation -- electron diffraction -- elemental semiconductors -- Ge Si alloys -- semiconductor heterojunctions -- semiconductor materials -- silicon -- heterostructures -- LACBED -- tetragonal distortion -- strain -- analytical electron microscope -- local sample flatness -- acceleration voltage -- semiconductors -- SiGe Si

© EDP Sciences 1995