Free Access
| Issue |
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
|
|
|---|---|---|
| Page(s) | 449 - 456 | |
| DOI | https://doi.org/10.1051/mmm:1995135 | |
Microsc. Microanal. Microstruct. 6, 449-456 (1995)
DOI: 10.1051/mmm:1995135
1 CNR-Istituto LAMEL, Via P. Gobetti, 101 40129 Bologna, Italy
2 Dipartimento di Fisica, Universita' di Modena, Via Campi 213/A 41100 Modena, Italy
6114F - Experimental electron diffraction and scattering.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
6825 - Mechanical and acoustical properties of solid surfaces and interfaces.
6220F - Deformation and plasticity.
8140L - Deformation, plasticity and creep.
Key words
deformation -- electron diffraction -- elemental semiconductors -- Ge Si alloys -- semiconductor heterojunctions -- semiconductor materials -- silicon -- heterostructures -- LACBED -- tetragonal distortion -- strain -- analytical electron microscope -- local sample flatness -- acceleration voltage -- semiconductors -- SiGe Si
© EDP Sciences 1995
DOI: 10.1051/mmm:1995135
Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED
Aldo Armigliato1, Roberto Balboni1, Franco Corticelli1 et Stefano Frabboni21 CNR-Istituto LAMEL, Via P. Gobetti, 101 40129 Bologna, Italy
2 Dipartimento di Fisica, Universita' di Modena, Via Campi 213/A 41100 Modena, Italy
Abstract
The LACBED technique has been applied to the determination
of the
tetragonal distortion in
heterostructures,
which are of
great interest in the device technology. The strain determination has
been performed on plan sections in an analytical electron microscope.
The agreement between this strain value and the tetragonal distortion
is influenced mainly by the local sample flatness and the acceleration
voltage.
6114F - Experimental electron diffraction and scattering.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
6825 - Mechanical and acoustical properties of solid surfaces and interfaces.
6220F - Deformation and plasticity.
8140L - Deformation, plasticity and creep.
Key words
deformation -- electron diffraction -- elemental semiconductors -- Ge Si alloys -- semiconductor heterojunctions -- semiconductor materials -- silicon -- heterostructures -- LACBED -- tetragonal distortion -- strain -- analytical electron microscope -- local sample flatness -- acceleration voltage -- semiconductors -- SiGe Si
© EDP Sciences 1995