Free Access
Microsc. Microanal. Microstruct.
Volume 5, Number 4-6, August / October / December 1994
Page(s) 535 - 543
Microsc. Microanal. Microstruct. 5, 535-543 (1994)
DOI: 10.1051/mmm:0199400504-6053500

Scanning surface harmonic microscopy: Application to silicon and Langmuir-Blodgett films on silicon

Jean-Philippe Bourgoin, Matthew Bruce Johnson et Bruno Michel

IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschilikon, Switzerland

The scanning surface harmonic microscope is a local probe method in which a microwave signal is applied across a tip-sample tunneling gap generating higher harmonics, which can then be detected. Thus this microscope is sensitive to nonlinearities in the tip-sample junction. In Si and other semiconductors it is sensitive to nonlinearities in the tip-sample capacitance voltage characteristics (C/V). Such a local C/V has been used to delineate regions of different dopant type and concentration in n +/p silicon gratings. On Langmuir-Blodgett films of dielectrics, such as docosanoic acid on Si, the scanning surface harmonic microscope is sensitive to changes in film thickness which cause shifts in the C/V characteristics of the underlying Si.

6837E - Scanning tunneling microscopy (including chemistry induced with STM).
0779C - Scanning tunneling microscopes.
6855L - Defects and impurities: doping, implantation, distribution, concentration, etc..
6847P - Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces.

Key words
STM -- Experimental study -- Doping -- Concentration ratio -- Semiconductor materials -- Microwave radiation -- Doping profiles -- Thin films -- Langmuir-Blodgett films -- Scanning probe microscopy -- Scanning surface harmonic microscopy -- Metrology -- Physics

© EDP Sciences 1994