Free Access
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
Page(s) 483 - 490
Microsc. Microanal. Microstruct. 6, 483-490 (1995)
DOI: 10.1051/mmm:1995139

Lattice Electron Microscopy and Image Processing of Ion-Implanted and Laser-Annealed GaAs Structures

Gianfranco Vitali1, Marco Rossi1, Giuseppe Zollo1, Cesare Pizzuto1, Nikolai Pashov2 et Maria Kalitzova2

1  Dipartimento di Energetica, Università "La Sapienza", via A. Scarpa, 14 - 00161 Roma and INFM, UdR RM I, Italy
2  Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee, 72 -1784 Sofia, Bulgaria

The efficiency of the Low-Power Pulsed-Laser Annealing (LPPLA) as a treatment to restore the ion implantation induced crystal disorder is well-known, but it is still open the question regarding the way in which is possible to model the LPPLA dynamic effects. At this purpose we believe that a deeper knowledge about the modification of the ion-induced extended defects (dislocations, stacking faults, clusters), as a consequence of the LPPLA treatment, is relevant. In our opinion, a technique suitable to gain this information could be the lattice image digital processing. In this paper we reported the experimental results concerning the use of this technique applied to some HRTEM images of low-dose implanted GaAs samples. In particular, the appearance of different types of extended defects in the implanted material and their annealing with LPPLA have been put in evidence.

6170T - Doping and implantation of impurities.
6180J - Ion beam effects.
6170A - Annealing processes.
6180B - Ultraviolet, visible and infrared radiation effects.
6170P - Stacking faults, stacking fault tetrahedra and other planar or extended defects.
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6116D - Electron microscopy determinations of structures.
2550B - Semiconductor doping.
2520D - II VI and III V semiconductors.
2550A - Annealing processes in semiconductor technology.

Key words
dislocations -- gallium arsenide -- III V semiconductors -- ion implantation -- laser beam annealing -- stacking faults -- transmission electron microscopy -- low power pulsed laser annealing -- ion implantation -- crystal disorder -- extended defects -- dislocations -- stacking faults -- clusters -- lattice image digital processing -- HRTEM -- low dose implanted GaAs -- semiconductor -- GaAs

© EDP Sciences 1995