Free Access
| Issue |
Microsc. Microanal. Microstruct.
Volume 2, Number 6, December 1991
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|---|---|---|
| Page(s) | 617 - 626 | |
| DOI | https://doi.org/10.1051/mmm:0199100206061700 | |
Microsc. Microanal. Microstruct. 2, 617-626 (1991)
DOI: 10.1051/mmm:0199100206061700
Dipartimento di Fisica, Universita' di Modena, Via G. Campi 213/A, I-41100, Modena, Italy
6114L - Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction.
6172S - Impurity concentration, distribution, and gradients.
Key words
Strain measurement -- Convergent beam method -- Electron diffraction -- Elemental semiconductors -- Silicon -- Doped materials -- Boron additions -- Dopant concentration -- Si:B
© EDP Sciences 1991
DOI: 10.1051/mmm:0199100206061700
CBED strain measurements in boron implanted silicon
Roberto Balboni et Stefano FrabboniDipartimento di Fisica, Universita' di Modena, Via G. Campi 213/A, I-41100, Modena, Italy
Abstract
Strain measurements were performed by convergent-beam electron diffraction on both plan-view sample and cross-sections of silicon wafers, boron implanted at liquid nitrogen temperature. In the plan-view specimens, the strain value measured in the boron-doped layer agrees with previous X-ray double crystal diffraction analyses. In the cross-sectioned specimens, a profile of the strain was obtained, showing a difference between the boron-doped layer and the end-of-range, interstitial-rich layer. In the latter samples the quantitative agreement with X-ray measurements is reached when extra-relaxation along the thinning direction is taken into account.
6114L - Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction.
6172S - Impurity concentration, distribution, and gradients.
Key words
Strain measurement -- Convergent beam method -- Electron diffraction -- Elemental semiconductors -- Silicon -- Doped materials -- Boron additions -- Dopant concentration -- Si:B
© EDP Sciences 1991