Free Access
Issue |
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
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Page(s) | 137 - 142 | |
DOI | https://doi.org/10.1051/mmm:0199300402-3013700 |
Microsc. Microanal. Microstruct. 4, 137-142 (1993)
DOI: 10.1051/mmm:0199300402-3013700
1 Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
2 Department of Materials Science and Engineering, Faculty of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
6172T - Doping and impurity implantation in germanium and silicon.
6180F - Electron and positron radiation effects.
6837L - Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.).
Key words
Implantation -- Electron irradiation -- High-voltage electron microscopy -- High-resolution methods -- Silicon -- Elemental semiconductors -- Amorphization -- Atom implantation -- Gold atom -- Si:Au
© EDP Sciences 1993
DOI: 10.1051/mmm:0199300402-3013700
Implantation of gold atoms into silicon by MeV electron irradiation
Hirotaro Mori1, Takao Sakata1, Masao Komatsu1 et Hidehiro Yasuda21 Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
2 Department of Materials Science and Engineering, Faculty of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
Abstract
Gold atom implantation into a silicon substrate, which is induced by MeV electron irradiation, has been examined by a combination of high voltage electron microscopy and high resolution electron microscopy. Gold atoms are implanted into the silicon substrate preferentially in the direction of incident electron beam. With increasing total dose of electrons gold-implanted regions become amorphous. With continued irradiation the amorphous gold-enriched region migrates in the substrate in the incident beam direction.
6172T - Doping and impurity implantation in germanium and silicon.
6180F - Electron and positron radiation effects.
6837L - Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.).
Key words
Implantation -- Electron irradiation -- High-voltage electron microscopy -- High-resolution methods -- Silicon -- Elemental semiconductors -- Amorphization -- Atom implantation -- Gold atom -- Si:Au
© EDP Sciences 1993