Free Access
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
Page(s) 137 - 142
Microsc. Microanal. Microstruct. 4, 137-142 (1993)
DOI: 10.1051/mmm:0199300402-3013700

Implantation of gold atoms into silicon by MeV electron irradiation

Hirotaro Mori1, Takao Sakata1, Masao Komatsu1 et Hidehiro Yasuda2

1  Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Yamadaoka, Suita, Osaka 565, Japan
2  Department of Materials Science and Engineering, Faculty of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565, Japan

Gold atom implantation into a silicon substrate, which is induced by MeV electron irradiation, has been examined by a combination of high voltage electron microscopy and high resolution electron microscopy. Gold atoms are implanted into the silicon substrate preferentially in the direction of incident electron beam. With increasing total dose of electrons gold-implanted regions become amorphous. With continued irradiation the amorphous gold-enriched region migrates in the substrate in the incident beam direction.

6172T - Doping and impurity implantation in germanium and silicon.
6180F - Electron and positron radiation effects.
6837L - Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.).

Key words
Implantation -- Electron irradiation -- High-voltage electron microscopy -- High-resolution methods -- Silicon -- Elemental semiconductors -- Amorphization -- Atom implantation -- Gold atom -- Si:Au

© EDP Sciences 1993