Free Access
| Issue |
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
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|---|---|---|
| Page(s) | 211 - 220 | |
| DOI | https://doi.org/10.1051/mmm:0199300402-3021100 | |
Microsc. Microanal. Microstruct. 4, 211-220 (1993)
DOI: 10.1051/mmm:0199300402-3021100
Department of Applied Physics, faculty of Engineering, University of Tokyo, Hongo, Tokyo 113, Japan
6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
6180F - Electron and positron radiation effects.
Key words
Dislocation glide -- Electron irradiation -- TEM -- In situ -- Kinks -- Monocrystals -- Silicon carbides -- Partial dislocation -- SiC -- C Si
© EDP Sciences 1993
DOI: 10.1051/mmm:0199300402-3021100
Recombination enhanced dislocation glide in silicon carbide observed in-situ by transmission electron microscopy
Koji Maeda, Kunio Suzuki et Masaki IchiharaDepartment of Applied Physics, faculty of Engineering, University of Tokyo, Hongo, Tokyo 113, Japan
Abstract
The recombination enhanced dislocation glide in a 6H-SiC single crystal was studied by in-situ transmission electron microscopy. Electron beam irradiation even at room temperature induced reversible increase in the glide velocity of basal 90°-partial dislocations in proportion to the beam intensity. Evidences for enhancement of the double kink formation as well as for the kink migration are presented.
6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
6180F - Electron and positron radiation effects.
Key words
Dislocation glide -- Electron irradiation -- TEM -- In situ -- Kinks -- Monocrystals -- Silicon carbides -- Partial dislocation -- SiC -- C Si
© EDP Sciences 1993