Free Access
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
Page(s) 211 - 220
Microsc. Microanal. Microstruct. 4, 211-220 (1993)
DOI: 10.1051/mmm:0199300402-3021100

Recombination enhanced dislocation glide in silicon carbide observed in-situ by transmission electron microscopy

Koji Maeda, Kunio Suzuki et Masaki Ichihara

Department of Applied Physics, faculty of Engineering, University of Tokyo, Hongo, Tokyo 113, Japan

The recombination enhanced dislocation glide in a 6H-SiC single crystal was studied by in-situ transmission electron microscopy. Electron beam irradiation even at room temperature induced reversible increase in the glide velocity of basal 90°-partial dislocations in proportion to the beam intensity. Evidences for enhancement of the double kink formation as well as for the kink migration are presented.

6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
6180F - Electron and positron radiation effects.

Key words
Dislocation glide -- Electron irradiation -- TEM -- In situ -- Kinks -- Monocrystals -- Silicon carbides -- Partial dislocation -- SiC -- C Si

© EDP Sciences 1993