Free Access
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
Page(s) 443 - 448
Microsc. Microanal. Microstruct. 6, 443-448 (1995)
DOI: 10.1051/mmm:1995134

Atomic String Potentials and the Form of [0001] Zone Axis Patterns of GaS, GaSe and InSe

John W. Steeds

Department of Physics, University of Bristol, Bristol BS8 1TL, UK

The relationship between the form of hexagonal zone axis patterns and the projected atomic potential is explored as a method for polytype identification of GaS, GaSe and InSe. As the various known polytypes of these materials project to give unit cells with very different simple-string potentials this relationship may be exploited by making use of previous related work. It is found that this method is simple to apply and consistent with the results of more conventional analyses based on the symmetry of convergent beam electron diffraction patterns. Growth faults could, however, cause ambiguities in the method of analysis.

6114F - Experimental electron diffraction and scattering.
6114D - Theories of electron diffraction and scattering.

Key words
electron diffraction -- gallium compounds -- III V semiconductors -- indium compounds -- atomic string potentials -- hexagonal [0001] zone axis patterns -- polytype identification -- growth faults -- convergent beam electron diffraction -- semiconductors -- GaS -- GaSe -- InSe

© EDP Sciences 1995