Free Access
Issue |
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
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Page(s) | 499 - 504 | |
DOI | https://doi.org/10.1051/mmm:1995141 |
Microsc. Microanal. Microstruct. 6, 499-504 (1995)
DOI: 10.1051/mmm:1995141
1 CNR-Istituto LAMEL, Via Piero Gobetti n.101, 40129 Bologna, Italy
2 PASTIS-CNRSM SCpA, S.S.7 km 714.3, 72100 Brindisi, Italy
6116D - Electron microscopy determinations of structures.
7920K - Other electron surface impact phenomena.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
Key words
aluminium compounds -- electron backscattering -- gallium arsenide -- III V semiconductors -- Monte Carlo methods -- scanning electron microscopy -- semiconductor heterojunctions -- semiconductor multilayers -- backscattered electrons -- scanning electron microscopy -- backscattering imaging mode -- Monte Carlo simulations -- image formation -- beam size -- signal to noise ratio -- GaAs AlAs
© EDP Sciences 1995
DOI: 10.1051/mmm:1995141
Resolution of Semiconductor Multilayers using Backscattered Electrons in Scanning Electron Microscopy
Donato Govoni1, Pier Giorgio Merli1, Andrea Migliori1 et Michele Nacucchi21 CNR-Istituto LAMEL, Via Piero Gobetti n.101, 40129 Bologna, Italy
2 PASTIS-CNRSM SCpA, S.S.7 km 714.3, 72100 Brindisi, Italy
Abstract
Observations of semiconductor multilayers with
backscattered electrons in a scanning electron microscope have
been used to revisit the concept of resolution of the
backscattering imaging mode. With the support of Monte Carlo
simulations of beam specimen interaction, it has been possible
to achieve the following conclusions. All the backscattered
electrons positively contribute to the image formation
independently of their trajectories and specimen exit points.
The generation volume does not represent in itself a limit to the
resolution, which depends only on the beam size and the signal
to noise ratio.
6116D - Electron microscopy determinations of structures.
7920K - Other electron surface impact phenomena.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
Key words
aluminium compounds -- electron backscattering -- gallium arsenide -- III V semiconductors -- Monte Carlo methods -- scanning electron microscopy -- semiconductor heterojunctions -- semiconductor multilayers -- backscattered electrons -- scanning electron microscopy -- backscattering imaging mode -- Monte Carlo simulations -- image formation -- beam size -- signal to noise ratio -- GaAs AlAs
© EDP Sciences 1995