Microsc. Microanal. Microstruct. 6, 647-657 (1995)
DOI: 10.1051/mmm:1995154

Interpretation of Holographic Contour Maps of Reverse Biased p-n Junctions

Clara Capiluppi¹, Andrea Migliori² et Giulio Pozzi<sup>1

1</sup>  Department of Physics and Istituto Nazionale di Fisica della Materia, University of Bologna, viale B. Pichat 6, 40127 Bologna, Italy
²  CNR-LAMEL, via P. Gobetti 101, 40129 Bologna, Italy

Abstract
Reverse-biased p-n junctions have been observed by means of electron holography using a transmission electron microscope equipped with an electron biprism and a field emission gun. Aim of this work is to present and discuss an analytical model for the electric field associated to a periodic array of alternating p and n stripes lying in a half-plane which simulates the experimental set-up and allows the interpretation of the main features of the observed holograms and the quantitative evaluation of the effect of the fringing field on the holograms and on the reconstructed images.

PACS
6848 - Solid solid interfaces.
4180D - Electron beams and electron optics.
6116D - Electron microscopy determinations of structures.
2530B - Semiconductor junctions.

Key words
electron optics -- holography -- interface structure -- p n junctions -- transmission electron microscopy -- holographic contour maps -- reverse biased p n junctions -- electron holography -- transmission electron microscopy -- electron biprism -- field emission gun -- electric field -- periodic array -- p stripes -- n stripes -- half plane -- fringing field -- reconstructed images


© EDP Sciences 1995