Free Access
Microsc. Microanal. Microstruct.
Volume 8, Number 4-5, August / October 1997
Page(s) 251 - 260
Microsc. Microanal. Microstruct. 8, 251-260 (1997)
DOI: 10.1051/mmm:1997120

Mechanical Properties of Optical Dielectric Thin Films Deposited by the Ion Plating Technique

Christine Mahodaux1, Hervé Rigneault1, Hugues Giovannini1, Ludovic Escoubas1 et Paul Morreti2

1  Laboratoire d'Optique des Surfaces et des Couches Minces, UPRES A CNRS 6080, ENSPM, Domaine Universitaire de Saint-Jérôme, 13397 Marseille Cedex 20, France
2  Laboratoire de Physico-Chimie des Matériaux Luminescents, UMR CNRS 5620, Université Claude Bernard Lyon I, 43 boulevard du 11 Novembre 1918, 69622 Villeurbanne, France

Stress in thin films deposited by Reactive Low-Voltage Ion Plating (RLVIP) is studied in air and at room temperature. A multilayer stack, composed of tantalum pentoxide and silicon dioxide layers, is considered and the interactions layer to layer turn out to have no effect as regards to the final bending. The evolutions of plate bending after annealing show the possibility to reduce the stress as well as the absorption for tantalum pentoxide thin films. Finally, ion implantation, with ions such He+ or Xe+ accelerated at energy in the MeV range, proves to be also a way to vary and reduce the stress in thin films.

6860 - Physical properties of thin films, nonelectronic.
7755 - Dielectric thin films.
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
6170A - Annealing processes.
6170T - Doping and implantation of impurities.
4278H - Optical coatings.
6220F - Deformation and plasticity.
8140L - Deformation, plasticity and creep.

Key words
annealing -- bending -- dielectric thin films -- internal stresses -- ion implantation -- ion plating -- optical films -- silicon compounds -- tantalum compounds -- mechanical properties -- optical dielectric thin films -- ion plating technique -- stress -- reactive low voltage ion plating -- room temperature -- multilayer stack -- bending -- annealing -- ion implantation -- He sup + -- Xe sup + -- SiO sub 2 -- Ta sub 2 O sub 5

© EDP Sciences 1997