Free Access
Microsc. Microanal. Microstruct.
Volume 8, Number 4-5, August / October 1997
Page(s) 261 - 272
Microsc. Microanal. Microstruct. 8, 261-272 (1997)
DOI: 10.1051/mmm:0199700804-5026100

Characterization of W Films on Si and SiO2/Si Substrates by X-Ray Diffraction, AFM and Blister Test Adhesion Measurements

Alain Bosseboeuf1, Michel Dupeux2, Mathilde Boutry1, Tarik Bourouina1, Daniel Bouchier1 et Dominique Débarre1

1  Institut d'Électronique Fondamentale (CNRS URA 0022), Université Paris-Sud, Centre d'Orsay, Bâtiment 220, 91405 Orsay Cedex, France
2  Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques (CNRS UMR 5614/INPG/UJFG), ENSEEG, BP 75, 38402 Saint-Martin d'Hères, Cedex, France

Contrary to most classical adhesion test, the blister test provides quantitative adhesion energy measurements. We demonstrate its application to 1 μm thick W films in tensile stress state deposited by xenon DC magnetron sputtering on PECVD/Si(100) substrates. The W films surface morphology, structure and residual stress were also characterized by atomic force microscopy, X-ray diffraction and substrate curvature measurements as function of the deposition pressure. Films characteristics are compared with those of W films deposited directly on Si(100) substrates.

6855 - Thin film growth, structure, and epitaxy.
6116P - Scanning probe microscopy determinations of structures.
6820 - Solid surface structure.
8115C - Deposition by sputtering.
6860 - Physical properties of thin films, nonelectronic.

Key words
adhesion -- atomic force microscopy -- internal stresses -- metallic thin films -- MIS structures -- semiconductor metal boundaries -- sputtered coatings -- substrates -- surface structure -- tungsten -- X ray diffraction -- characterization -- W films -- SiO sub 2 Si substrate -- Si substrate -- X ray diffraction -- AFM -- blister test adhesion measurements -- adhesion energy -- tensile stress state -- DC magnetron sputtering -- PECVD -- surface morphology -- structure -- residual stress -- atomic force microscopy -- substrate curvature measurements -- deposition pressure -- Si -- SiO sub 2 Si -- W SiO sub 2 Si

© EDP Sciences 1997