Free Access
Issue
Microsc. Microanal. Microstruct.
Volume 4, Number 2-3, April / June 1993
Page(s) 101 - 110
DOI https://doi.org/10.1051/mmm:0199300402-3010100
Microsc. Microanal. Microstruct. 4, 101-110 (1993)
DOI: 10.1051/mmm:0199300402-3010100

Stimulation of use of in-situ experiments in high voltage electron microscopes in advancing science and technology

Toru Imura

Department of Mechanical Engineering, Aichi Institute of Technology, Yagusa-cho. Toyota City, 470-03, Japan


Abstract
At first, a brief historical sketch of the development of in-situ experiments in electron microscopes is made. Next, the merits of use of high voltage electron microscopy (HVEM) for carrying out in-situ experiments, and four types of effort made to improve the in-situ HVEM are described. Then, advantages of a newly developed STEM-mode HVEM of Nagoya university and possible applications of it are discussed. As for the applications of in-situ experiments made so far by the author's group, the research subjects particularly related to the studies of behavior of lattice defects are referred, and the results obtained on the mobility of edge and screw dislocations in bcc metals and alloys, and those on the temperature dependence of stacking-fault energies in fcc metals and alloys are illustrated. Further improvements and new fields of application of the in-situ HVEM are suggested.

PACS
6172F - Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.).
0778 - Electron, positron, and ion microscopes; electron diffractometers.

Key words
Electron microscopy -- High voltage electron microscope -- STEM -- In situ -- Instrumentation -- Dislocations -- Etch pits -- Stacking faults -- Temperature dependence


© EDP Sciences 1993