Free Access
| Issue |
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
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|---|---|---|
| Page(s) | 523 - 531 | |
| DOI | https://doi.org/10.1051/mmm:1995144 | |
Microsc. Microanal. Microstruct. 6, 523-531 (1995)
DOI: 10.1051/mmm:1995144
On the Improvement of SIMS Technique by the Use of
Cosimo Gerardi et Claudia Massaro
PASTIS-CNRSM, Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali, SS7 "Appia", km 714, 72100-Brindisi, Italy
7920N - Atom , molecule , and ion surface impact and interactions.
0775 - Mass spectrometers and mass spectrometry techniques.
6855 - Thin film growth, structure, and epitaxy.
Key words
gallium arsenide -- III V semiconductors -- indium compounds -- iron -- secondary ion mass spectroscopy -- semiconductor thin films -- silicon compounds -- zirconium -- SIMS -- molecular ions -- Cs sup + bombardment -- matrix effects -- linear calibration curves -- signal intensity ratios -- XPS -- depth resolution -- near surface pre equilibrium region -- InGaAs -- Fe Zr SiO sub 2
© EDP Sciences 1995
DOI: 10.1051/mmm:1995144
On the Improvement of SIMS Technique by the Use of 
Molecular Ions
Cosimo Gerardi et Claudia Massaro PASTIS-CNRSM, Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali, SS7 "Appia", km 714, 72100-Brindisi, Italy
Abstract
The SIMS 
method, consisting of detecting the molecular ions
formed by the element of interest M and 
ion, emitted under
bombardment is discussed in this work. A strong reduction of
matrix effects has been observed in all the investigated
samples. Moreover linear calibration curves can been obtained
with good accuracies by plotting the relative matrix
concentrations against the corresponding signal intensity
ratios. A comparison with XPS results obtained from the
analysis of a Fe on Zr on 
structure has been also reported.
In addition good depth resolution and near surface
pre-equilibrium region reduction have been observed on
profiles.
7920N - Atom , molecule , and ion surface impact and interactions.
0775 - Mass spectrometers and mass spectrometry techniques.
6855 - Thin film growth, structure, and epitaxy.
Key words
gallium arsenide -- III V semiconductors -- indium compounds -- iron -- secondary ion mass spectroscopy -- semiconductor thin films -- silicon compounds -- zirconium -- SIMS -- molecular ions -- Cs sup + bombardment -- matrix effects -- linear calibration curves -- signal intensity ratios -- XPS -- depth resolution -- near surface pre equilibrium region -- InGaAs -- Fe Zr SiO sub 2
© EDP Sciences 1995