Free Access
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
Page(s) 551 - 558
Microsc. Microanal. Microstruct. 6, 551-558 (1995)
DOI: 10.1051/mmm:1995147

Dopant Concentration Measurements by Scanning Force Microscopy via p-n Junctions Stray Fields

Jacopo Dallari et Ugo Valdrè

Electron Microscopy Centre, Physics Department of the University and INFM-CNR, via Irnerio 46, 40126 Bologna, Italy

Scanning Force Microscopy, a non-destructive technique, has been applied to p-n junctions to: (i) locate the metallurgical and the electrical junctions; (ii) determine the z-component and gradient of the stray electric field; (iii) measure the width of the depletion region on the n- and p-sides; (iv) work out the dopant concentration in both n- and p-sides.

6170W - Impurity concentration, distribution, and gradients.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
6116P - Scanning probe microscopy determinations of structures.

Key words
atomic force microscopy -- impurities -- p n junctions -- scanning force microscopy -- dopant concentration -- p n junctions -- stray fields -- z component -- depletion region -- semiconductors

© EDP Sciences 1995