Free Access
Issue |
Microsc. Microanal. Microstruct.
Volume 6, Number 5-6, October / December 1995
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Page(s) | 551 - 558 | |
DOI | https://doi.org/10.1051/mmm:1995147 |
Microsc. Microanal. Microstruct. 6, 551-558 (1995)
DOI: 10.1051/mmm:1995147
Electron Microscopy Centre, Physics Department of the University and INFM-CNR, via Irnerio 46, 40126 Bologna, Italy
6170W - Impurity concentration, distribution, and gradients.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
6116P - Scanning probe microscopy determinations of structures.
Key words
atomic force microscopy -- impurities -- p n junctions -- scanning force microscopy -- dopant concentration -- p n junctions -- stray fields -- z component -- depletion region -- semiconductors
© EDP Sciences 1995
DOI: 10.1051/mmm:1995147
Dopant Concentration Measurements by Scanning Force Microscopy via p-n Junctions Stray Fields
Jacopo Dallari et Ugo ValdrèElectron Microscopy Centre, Physics Department of the University and INFM-CNR, via Irnerio 46, 40126 Bologna, Italy
Abstract
Scanning Force Microscopy, a non-destructive
technique, has been applied to p-n
junctions to: (i) locate the metallurgical and the
electrical junctions; (ii) determine the z-component and
gradient of the stray electric field; (iii) measure the width of
the depletion region on the n- and p-sides; (iv) work out the
dopant concentration in both n- and p-sides.
6170W - Impurity concentration, distribution, and gradients.
7340L - Electrical properties of semiconductor to semiconductor contacts, p n junctions, and heterojunctions.
6116P - Scanning probe microscopy determinations of structures.
Key words
atomic force microscopy -- impurities -- p n junctions -- scanning force microscopy -- dopant concentration -- p n junctions -- stray fields -- z component -- depletion region -- semiconductors
© EDP Sciences 1995